The IXZ4DF12N100 is a CMOS high speed high current gate driver and a MOSFET combination specifically designed Class D and E, HF and RF applications at up to 30 MHz, as well as other applications. The ...

SEMICON West was held last week in San Francisco and I had the opportunity to attend the Emerging Architectures session. Serge Biesemans, vice president of process technology at Imec, gave a nice ...

Diamond CMOS needs symmetrical doping control like we have for semiconductor silicon and diamond n-MOS is needed. The n-channel diamond MOSFETs are demonstrated. This work will enable the development ...

For more than three decades bulk-silicon MOSFET has been the transistor workhorse of CMOS technology. We have become terribly addicted to the density and performance gain from shrinking it. More speed ...

A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

IBM revealed vertical FET CMOS logic at a sub-45nm gate pitch on bulk silicon wafers at the IEEE International electron devices meeting in San Francisco this week. IBM’s VTFET with a vertical channel ...

Chipmakers continue to scale the CMOS transistor to finer geometries, but the question is for how much longer. The current thinking is that the CMOS transistor could scale at least to the 3nm node in ...